Simulation of exposure and alignment for nano-imprint lithography

Yunfei Deng; Andrew R. Neureuther

doi:10.1117/12.472356

1 July 2002 Simulation of exposure and alignment for nanoimprint lithography

Yunfei Deng, Andrew R. Neureuther

Proceedings Volume 4688, Emerging Lithographic Technologies VI; (2002) https://doi.org/10.1117/12.472356
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

Rigorous electromagnetic simulation with TEMPEST is used to examine the exposure and alignment processes for nano-imprint lithography with attenuating thin-film molds. Parameters in the design of topographical features of the nano-imprint system and material choices of the components are analyzed. The small feature size limits light transmission through the feature. While little can be done with auxiliary structures to attract light into small holes, the use of an absorbing material with a low real part of the refractive index such as silver helps mitigates the problem. Results on complementary alignment marks shows that the small transmission through the metal layer and the vertical separation of two alignment marks create the leakage equivalent to 1 nm misalignment but satisfactory alignment can be obtained by measuring alignment signals over a +/- 30 nm range.

Citation Download Citation

Yunfei Deng and Andrew R. Neureuther "Simulation of exposure and alignment for nanoimprint lithography", Proc. SPIE 4688, Emerging Lithographic Technologies VI, (1 July 2002); https://doi.org/10.1117/12.472356

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