Paper
16 July 2002 Evaluation of lithographic imaging performance by optical area measurement
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Abstract
We present a new technique for accurate and fast evaluation of lithographic imaging performance at critical dimensions (CDs) of 100 nm and below. Its advantages over traditional methods that use either SEM or electrical CD metrologies are based on two key factors. First, it exploits a specially designed mark corresponding to a particular CD. Second, instead of mark dimensions the mark image irradiance is measured with a CCD TV camera. In combination, these provide an easy-to-implement and inexpensive technique for controlling exposure tool imaging performance. In actual application, best focus determination shows a repeatability of less than 5 nm.
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Ilya Grodnensky, Shinji Mizutani, and Steve D. Slonaker "Evaluation of lithographic imaging performance by optical area measurement", Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); https://doi.org/10.1117/12.473410
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KEYWORDS
Critical dimension metrology

Cadmium sulfide

Scanning electron microscopy

CCD cameras

Lithography

Microscopes

Metrology

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