Dislocations in HgCdTe (111)B films

Jianrong Yang; Xinqiang Chen; Li He

doi:10.1117/12.451894

5 December 2002 Dislocations in HgCdTe (111)B films

Jianrong Yang, Xinqiang Chen, Li He

Proceedings Volume 4795, Materials for Infrared Detectors II; (2002) https://doi.org/10.1117/12.451894
Event: International Symposium on Optical Science and Technology, 2002, Seattle, WA, United States

Abstract

The dislocations in HgCdTe films grown by LPE on CdZnTe (111)B substrates were studied by chemical etching. Among the etchants used for HgCdTe materials before, it was found that the Schaake etchant was an effective method to reveal the dislocations of HgCdTe (111)B films with a thickness over 5μm. Besides of the threading dislocations as reported before, another kind of dislocations induced by the stress was also observed by using Schaake etchant. Large quantities of such dislocations were observed in the areas nearby the melt droplet left on the LPE film and cutting line and on the surfaces of the HgCdTe films annealed by using a cap layer and unsuitable transportation of samples. The measurements of the depth profiles of the EPDs show that the most of the stress-induced dislocations are located in the surface layer and its density can be as high as 10⁷cm^-3. Whereas the EPD of the threading dislocation doesn't change a lot along the depth of the film in usual case. The Chen etchant can also be used to reveal the threading dislocations of the films thicker than about 10μm. The phenomena of two kinds of etch pits was also observed on the surface of HgCdTe film etched by the Chen etchant. The etch pit densities originated from threading dislocations are approximately the same for both etchants. But the stress-induced dislocations in the surface layer were not observed by using the Chen etchant except the area near the melt droplet.

Citation Download Citation

Jianrong Yang, Xinqiang Chen, and Li He "Dislocations in HgCdTe (111)B films", Proc. SPIE 4795, Materials for Infrared Detectors II, (5 December 2002); https://doi.org/10.1117/12.451894

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available