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A novel vapor-liquid-solid epitaxy (VLSE) process has been developed to synthesize high-density semiconductor nanowire arrays. The nanowires generally are single crystalline and have diameters of 10-200 nm and aspect ratios of 10-100. The areal density of the array can be readily approach 1010 cm-2. Results based on Si and ZnO nanowire systems are reported here.
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