Paper
23 January 2003 InP-based QWIPs for long- and mid-wavelength band detection
Gad Bahir, Yuri Gusakov, Shimon Maimon, Guy Cohen, Dan Ritter, Elieser Finkman
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Abstract
In this work we reporrt on strained controlled InP/InGaAs and strained compensated InP/InGaAs/InGaP quantum well IR photodetectors (QWIPS) that cover the spectral bands 8-11 μm and 4-6μm respectively. Two different approaches were demonstrated in this work. i) We explore the effect of introducing non lattice-matched InGaAs well in InP/InGaAs QWIP structures. We show that this enables to extend the QWIP operating wavelength up to 11.5 μm taking advantage of strain as a bandgap engineering design parameter. State of art QWIPs with peak detectivity at 8.5 μm of 8×109 cmHz1/2/W at 80K with 2pi FOV was demonstrated. ii) A high detectivity mid-IR QWIPs were demonstrated. These devices are based on strain compensated INGaAs/InP/InGaP multiquantum well structures, where the InGaP conduction band offset extends the wavelength detection range ino the mid-IR. Photodetectors with background-limited performance with detectivity of D*λ (BLIP)=3.2*1010 cmHz1/2/W up to 110 K, were implemented. We conclude that InP/InGaAs material system is suitable fo multicolro QWIPs applications, particularly for two color QWIPs operating in the 8-12 and 3-5 microns range simultaneously.
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Gad Bahir, Yuri Gusakov, Shimon Maimon, Guy Cohen, Dan Ritter, and Elieser Finkman "InP-based QWIPs for long- and mid-wavelength band detection", Proc. SPIE 4820, Infrared Technology and Applications XXVIII, (23 January 2003); https://doi.org/10.1117/12.451230
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KEYWORDS
Quantum well infrared photodetectors

Sensors

Mid-IR

Quantum wells

Indium gallium arsenide

Absorption

Long wavelength infrared

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