Paper
11 November 2002 Investigation of the design boundaries of a 3,072 x 2,048 image sensor pixel array
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Abstract
The practical boundaries surrounding the design of very high resolution image sensors have been studied. The case study used to analyze these practical boundaries is a CMOS photodiode active pixel sensor (APS) image sensor with pixel array format of 3,072 (H) X 2,048 (V). The frame rate of the image sensor is variable up to 30 frames per second (fps), leading to a maximum image data throughput of 180 M pixels per second. The pixel size is 6.0 μm, resulting in a pixel fill factor of approximately 48% (implemented in a 0.25 μm CMOS fabrication process) and a 4/3 inch optical format. The resultant die fill factor is approximately 54%. The column-parallel approach, which works well for both the on-chip analog signal processing and analog-to-digital conversion, is adopted. The 10-bit successive approximation ADC was deemed suitable for on-chip integration. The projected total power consumption of the case study image sensor chip is below 200 mW at 3.3-V power supply and below 100 mW at 1.5-V power supply. These power estimates were made for operation at full resolution (6 M pixels per frame) and at maximum frame rate (30 fps), leading to a maximum digital image data throughput of 1.8 G bits per second.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
El-Sayed I. Eid "Investigation of the design boundaries of a 3,072 x 2,048 image sensor pixel array", Proc. SPIE 4823, Photonics for Space Environments VIII, (11 November 2002); https://doi.org/10.1117/12.465858
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KEYWORDS
Image sensors

Analog electronics

Image resolution

Power supplies

Imaging devices

Image processing

CMOS sensors

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