Growth and storage properties of Zn:Ce:Mn:LiNbO3 crystals

Chaozhong Zhao; Chunhui Yang; Yuheng Xu

doi:10.1117/12.483305

17 September 2002 Growth and storage properties of Zn:Ce:Mn:LiNbO₃ crystals

Chaozhong Zhao, Chunhui Yang, Yuheng Xu

Proceedings Volume 4930, Advanced Optical Storage Technology; (2002) https://doi.org/10.1117/12.483305
Event: Photonics Asia, 2002, Shanghai, China

Abstract

Doping ZnO with the concentration of 3mol% and 7mol% in Ce:Mn:LiNbO₃, respectively, Zn:Ce:Mn:LiNbO₃ crystals were grown by Czochralski method. The optical damage resistance ability of crystals was measured. The optical damage resistance ability of Zn (7mol%):Ce:Mn:LiNbO₃ crystal is two orders magnitude higher than that of Ce:Mn:LiNbO₃ crystal. The exponentional gain coefficient, diffraction efficiency, response time and effective charge concentration were also obtained. The response speed of Zn(3mol%):Ce:Mn:LiNbO₃ and Zn(7mol%):Ce:Mn:LiNbO₃ crystal is two times and four times higher than that of Ce:Mn:LiNbO₃, respectively. The mechanism of optical damage resistance ability of Zn:Ce:Mn:LiNbO₃ crystal was researched.

Citation Download Citation

Chaozhong Zhao, Chunhui Yang, and Yuheng Xu "Growth and storage properties of Zn:Ce:Mn:LiNbO₃ crystals", Proc. SPIE 4930, Advanced Optical Storage Technology, (17 September 2002); https://doi.org/10.1117/12.483305

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