Determination of lithography process control metrics by spectroscopic scatterometry

Eric B Maiken; G. Raghavendra; Carmen Morales; Bryan Choo

doi:10.1117/12.485038

2 June 2003 Determination of lithography process control metrics by spectroscopic scatterometry

Eric B Maiken, G. Raghavendra, Carmen Morales, Bryan Choo

Proceedings Volume 5038, Metrology, Inspection, and Process Control for Microlithography XVII; (2003) https://doi.org/10.1117/12.485038
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

Spectroscopic Scatterometry was employed for definition of control metrics for lithography process tool optimization. Normal incidence unpolarized reflectance data was acquired in active device regions on resist gratings that defined the first gate level for the core array of a flash memory circuit. Calculations of the interactions of incident boradband light with the scattering structures were perforemd utilizing both a database of pre-computed spectra as well as a real-time method. Results from both inversion techniques were highly correlated. Scatterometry-based CDs were also highly correlated with dimensions determiend by CD-SEM and the modeled profiles clsoely matched cross section SEM data. Test wafer sets were patterned both at uniform exposure and as focus-exposure matrices, and measured to determine resist critical dimensions and thicknesses. Process variations were tracked across fields, across wafers and over time. Analytical models were applied to the profile data to determine rpocess windows and to define optimal scanner settings.

Citation Download Citation

Eric B Maiken, G. Raghavendra, Carmen Morales, and Bryan Choo "Determination of lithography process control metrics by spectroscopic scatterometry", Proc. SPIE 5038, Metrology, Inspection, and Process Control for Microlithography XVII, (2 June 2003); https://doi.org/10.1117/12.485038

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