Prototype infrared optical sensor and solar cell made of B-FeSi2 thin film

Shinan Wang; Naotaka Otogawa; Yasuhiko Fukuzawa; Honglie Shen; Hisao Tanoue; Takeshi Kojima; Yasuhiko Nakayama; Yunosuke Makita

doi:10.1117/12.502278

14 April 2003 Prototype infrared optical sensor and solar cell made of β-FeSi₂ thin film

Shinan Wang, Naotaka Otogawa, Yasuhiko Fukuzawa, Honglie Shen, Hisao Tanoue, Takeshi Kojima, Yasuhiko Nakayama, Yunosuke Makita

Author Affiliations +

Proceedings Volume 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2003) https://doi.org/10.1117/12.502278
Event: Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2002, Kiev, Ukraine

Abstract

A prototype infrared optical sensor has been fabricated by using a 0.21 μm-thick β-iron disilicide (β-FeSi₂) thin film prepared by reactive deposition epitaxy (RDE) on an n-type (100) Si substrate (ρ approximately 1.5 Ωcm). Manganese ions (Mn⁺) were implanted into the β-FeSi₂ thin film as p-type dopants with a total dose of 5.5 x 10¹⁸ cm^-3. Al and AuSb thin films were metallized on β-FeSi₂ and Si surfaces respectively as electrodes. A circle area of the FeSi₂ film was left naked as the illumination window. The good diode characteristic confirmed the high quality of the pn junction. The spectroscopic spectrum indicated a clear photoresponse at room temperature. As evaluated by a standard solar simulator, the device provided an open-circuit voltage of v_oc = 261 mV and a short-circuit current density of J_sc = 3.1 mA/cm², suggesting a large potential of such devices in solar energy conversion. Rutherford backscattering spectroscopy (RBS) measurements found a large volume of oxygen in the surface of the β-FeSi₂ thin film and severe Fe/Si interdiffusion at the silicide-Si interface. These unwanted effects may be responsible for the unideal device performance. Methods to solve these problems are discussed including a proposal of an all-iron-silicide structure.

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Shinan Wang, Naotaka Otogawa, Yasuhiko Fukuzawa, Honglie Shen, Hisao Tanoue, Takeshi Kojima, Yasuhiko Nakayama, and Yunosuke Makita "Prototype infrared optical sensor and solar cell made of β-FeSi₂ thin film", Proc. SPIE 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (14 April 2003); https://doi.org/10.1117/12.502278

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