Ion channel gating based on Kramers theory

Peter Hanggi; Igor Goychuk

doi:10.1117/12.500117

30 April 2003 Ion channel gating based on Kramers theory

Peter Hanggi, Igor Goychuk

Proceedings Volume 5110, Fluctuations and Noise in Biological, Biophysical, and Biomedical Systems; (2003) https://doi.org/10.1117/12.500117
Event: SPIE's First International Symposium on Fluctuations and Noise, 2003, Santa Fe, New Mexico, United States

Abstract

We consider an exactly tractable model of the Kramers type for the voltage-dependent gating dynamics of single ion channels. It is assumed that the gating dynamics is caused by the thermally activated transitions in a bistable potential. Moreover, the closed state of the channel is highly degenerate and embraces the whole manifold of closed substrates. Opening of the ion channel is energetically prohibited from most of the closed substates and requires a special conformation where the voltage sensor can move along an activation pathway and trigger the transition into the open conformation. When the corresponding activation barrier towards the channel's opening is removed by the applied voltage, the statistics of non-conducting time intervals become strongly influenced by the conformational diffusion. For the corresponding supra-threshold voltages, our model explains the origin of the power law distribution of the closed time intervals. The exponential-linear dependence of the opening rate on voltage, often used as an experimental fit, is also reproduced by our model.

Citation Download Citation

Peter Hanggi and Igor Goychuk "Ion channel gating based on Kramers theory", Proc. SPIE 5110, Fluctuations and Noise in Biological, Biophysical, and Biomedical Systems, (30 April 2003); https://doi.org/10.1117/12.500117

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