Paper
28 August 2003 UV light with oxygen treatment of phase shift photoblank for phase and transmission control: applicable to MxSi(1-x)OyN(y-1)
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Abstract
A method based on UV in air environment to improve the stability of the material of the photoreticles throughout cleans repeated over is suggested in this work. A typical aggressive clean was performed on two different Embedded Shifter materials, 193nm Molybdenum-Silicon-Oxy-Nitride (MoSiON) and 193nm Multilayer Silicon Nitride-Titanium Nitride (SiN-TiN). The variation of phase and transmission of each reticle is reported with the number of cleans. Given the appropriate exposure the phase and the transmission of the treated materials were significantly improved. All treated EAPSMs could stand cleans repeated over.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christian M. Chovino and Laurent Dieu "UV light with oxygen treatment of phase shift photoblank for phase and transmission control: applicable to MxSi(1-x)OyN(y-1)", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); https://doi.org/10.1117/12.504048
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Cited by 2 scholarly publications.
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KEYWORDS
Reticles

Ultraviolet radiation

Oxygen

Phase shifts

Multilayers

Photomasks

Silicon

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