Photothermal facility for optical characterization of DUV materials

Laurent Gallais; Hauke Hinsch; Man-Long Lay; Mireille Commandre

doi:10.1117/12.513405

25 February 2004 Photothermal facility for optical characterization of DUV materials

Laurent Gallais, Hauke Hinsch, Man-Long Lay, Mireille Commandre

Proceedings Volume 5250, Advances in Optical Thin Films; (2004) https://doi.org/10.1117/12.513405
Event: Optical Systems Design, 2003, St. Etienne, France

Abstract

A photothermal facility implemented for optical characterization at 244nm is presented. This apparatus allows simultaneous absorption, partial scattering and fluorescence mappings of substrates and thin films, using a collinear photothermal deflection technique. A CW 100mW - 244 nm pump laser beam is used, focused with 20 to 5 microns diameter. The technical data, calibration procedure as well as performances in terms of spatial resolution, detectivity and sensitivity are described in this paper. Then we give an application example with the case of an extrinsic absorbing/scattering/fluorescent defect on fused silica.

Citation Download Citation

Laurent Gallais, Hauke Hinsch, Man-Long Lay, and Mireille Commandre "Photothermal facility for optical characterization of DUV materials", Proc. SPIE 5250, Advances in Optical Thin Films, (25 February 2004); https://doi.org/10.1117/12.513405

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