MCT linear arrays and associated silicon readouts

Fiodor F. Sizov; Yurii P. Derkach; S. A. Dvoretski; Alexandr G. Golenkov; J. V. Gumenyuk-Sichevska; Vladimir P. Reva; Victor N. Ovsyuk; Yuri G. Sidorov; N. Kh. Talipov; V. V. Vasiliev; Vyacheslav V. Zabudsky

doi:10.1117/12.513747

19 February 2004 MCT linear arrays and associated silicon readouts

Fiodor F. Sizov, Yurii P. Derkach, S. A. Dvoretski, Alexandr G. Golenkov, J. V. Gumenyuk-Sichevska, Vladimir P. Reva, Victor N. Ovsyuk, Yuri G. Sidorov, N. Kh. Talipov, V. V. Vasiliev, Vyacheslav V. Zabudsky

Author Affiliations +

Proceedings Volume 5251, Detectors and Associated Signal Processing; (2004) https://doi.org/10.1117/12.513747
Event: Optical Systems Design, 2003, St. Etienne, France

Abstract

MCT 2×64 and 4×288 linear arrays with silicon readouts were designed, manufactured and tested. (013) MCT MBE layers were grown on GaAs substrates with ZnTe and CdTe buffer layers. 2×64 arrays were also manufactured on the base of LPE layers on CdZnTe (111) substrates. 50×55 and ≈30×30 μm area n-p-type photodiodes were formed by 50 ÷ 120 keV boron implantation. The dark currents at V ≈ 100 mV reversed biased diodes used in arrays with cutoff wavelength λ_co ≈ 10.0 - 12.2 μm were within 15 - 50 nA and zero bias resistance-area products were within R₀A ≈ 5 ÷ 20 Ohm×cm². Designed silicon readouts with skimming and partitioning functions were manufactured by n-channel MOS technology with buried or surface channel CCD register. For achievement with the silicon readouts the deselection function, the “composite” technology approach was considered. In this case both the technology of n-channel CCD and CMOS technology were applied, which allow to weaken considerably the technological design rules for realization of 288×4 readouts with deselection of “dead” elements. It is shown that 2.5 μm design rules for CCD and 2.0 design rules for CMOS technologies allow to realize most of the functions needed for 288×4 MCT array operation with deselection function. Before hybridisation the parameters of MCT linear arrays and Si readouts were tested separately. HgCdTe arrays and Si readouts were hybridised by cold welding In bumps technology. In dependence of FOV with skimming mode used for integration time of 8 - 20 μs detectivities within D*_λ (0.4 - 1.7)×10¹¹ cm×Hz^1/2/W were achieved in dependence of the array format. Dark carrier transport mechanisms in MCT diodes were calculated and compared with experimental data.

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Fiodor F. Sizov, Yurii P. Derkach, S. A. Dvoretski, Alexandr G. Golenkov, J. V. Gumenyuk-Sichevska, Vladimir P. Reva, Victor N. Ovsyuk, Yuri G. Sidorov, N. Kh. Talipov, V. V. Vasiliev, and Vyacheslav V. Zabudsky "MCT linear arrays and associated silicon readouts", Proc. SPIE 5251, Detectors and Associated Signal Processing, (19 February 2004); https://doi.org/10.1117/12.513747

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