Determination of junction depth and related current phenomena using laser-beam-induced current

Edward A. Gluszak; Steven Hinckley; Kamran Eshraghian

doi:10.1117/12.523536

30 March 2004 Determination of junction depth and related current phenomena using laser-beam-induced current

Edward A. Gluszak, Steven Hinckley, Kamran Eshraghian

Proceedings Volume 5274, Microelectronics: Design, Technology, and Packaging; (2004) https://doi.org/10.1117/12.523536
Event: Microelectronics, MEMS, and Nanotechnology, 2003, Perth, Australia

Abstract

The characterization of photodiode junction depth using laser beam induced current (LBIC) has long been ambiguous, due in part to the limited understanding behind the relevant physics governing this phenomena, and more importantly, the signal behavior for the various device geometries. In this work, the induced current behavior arising from the individual junction components that form the device for different geometric conditions is examined in detail. In particular, at low temperatures, the overall LBIC signal dependence to junction depth could be attributed to current crowding through the dominance of two competing current mechanisms which include a lateral current flow, I_lbic, and a transverse current flow, I_ph. This study represents another step in the development towards a fully quantitative procedure for extracting junction depth and alternatively interpreting the current contributions arising from the individual junction components using LBIC.

Citation Download Citation

Edward A. Gluszak, Steven Hinckley, and Kamran Eshraghian "Determination of junction depth and related current phenomena using laser-beam-induced current", Proc. SPIE 5274, Microelectronics: Design, Technology, and Packaging, (30 March 2004); https://doi.org/10.1117/12.523536

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