Ferromagnetism in transition metal-implanted titanium dioxide films

Sai-Peng Wong; Yun Gao; Kai Hon Cheng; Chi Fai Chow; Ning Ke; Wing Yiu Cheung; Quan Li; Guo Sheng Shao

doi:10.1117/12.530435

2 April 2004 Ferromagnetism in transition metal-implanted titanium dioxide films

Sai-Peng Wong, Yun Gao, Kai Hon Cheng, Chi Fai Chow, Ning Ke, Wing Yiu Cheung, Quan Li, Guo Sheng Shao

Proceedings Volume 5276, Device and Process Technologies for MEMS, Microelectronics, and Photonics III; (2004) https://doi.org/10.1117/12.530435
Event: Microelectronics, MEMS, and Nanotechnology, 2003, Perth, Australia

Abstract

In this work, TiO₂ thin films were prepared by RF sputtering onto thermally grown oxide layers on Si substrates. Cobalt and iron implantation into the TiO₂ films was performed using a metal vapor vacuum arc ion source. The as-implanted and annealed films were characterized using Rutherford backscattering spectrometry, transmission electron microscopy, x-ray diffractometry, x-ray photoelectron spectroscopy, spectroscopic ellipsometry, and vibrating sample magnetometry. The dependence of the magnetic properties on the implantation and annealing conditions were studied in detail. Clear room temperature ferromagnetic properties (RT FM) were observed. The saturation magnetization (M_s) values per implanted Co or Fe atom exhibit an oscillatory dependence on the implantation dose. The maximum M_s in one Co implanted samples was determined to be 2.3 μ_B/Co, exceeding the bulk Co value. The possible origins of the RT FM properties are discussed.

Citation Download Citation

Sai-Peng Wong, Yun Gao, Kai Hon Cheng, Chi Fai Chow, Ning Ke, Wing Yiu Cheung, Quan Li, and Guo Sheng Shao "Ferromagnetism in transition metal-implanted titanium dioxide films", Proc. SPIE 5276, Device and Process Technologies for MEMS, Microelectronics, and Photonics III, (2 April 2004); https://doi.org/10.1117/12.530435

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