Paper
12 May 2004 Accurately nonselective and selective etching of GaAs/Al0.8Ga0.2As/AlAs structure for making air-gap cavity
Author Affiliations +
Proceedings Volume 5280, Materials, Active Devices, and Optical Amplifiers; (2004) https://doi.org/10.1117/12.521698
Event: Asia-Pacific Optical and Wireless Communications, 2003, Wuhan, China
Abstract
We have demonstrated a wet etching technique capable of fabricating air-gap cavity. The process utilizes nonselective and selective etchants respectively to form air-gap cavity. The etching characteristics of GaAs/Al0.8Ga0.2As/AlAs structure in different nonselective and selective etchants are investigated. The volumetric 3:2:20 ratios of H3PO4/H2O2/H2O solution and volumetric 600:1 ratio of DI water/buffered oxide [mixture of 7:1 NH4F(36%)-HF(6.4%)] solution are better nonselective and selective etchants respectively. We have used this process technique to form a tunable air-gap cavity optical filter. The measure results of the transmission spectral show that the air-gap cavity has high optical quality. These simple etching processes can be applied to fabricate the air-gap cavity devices.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhou Zhen, Yun Du, Yongqing Huang, Ronghan Wu, and Xiaomin Ren "Accurately nonselective and selective etching of GaAs/Al0.8Ga0.2As/AlAs structure for making air-gap cavity", Proc. SPIE 5280, Materials, Active Devices, and Optical Amplifiers, (12 May 2004); https://doi.org/10.1117/12.521698
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Cited by 2 scholarly publications and 1 patent.
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KEYWORDS
Etching

Gallium

Wet etching

Oxides

Gallium arsenide

Aluminum

Optical filters

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