High Current Implantation Systems For CMOS

B. A. Thorburn; R. B. Thayer

doi:10.1117/12.946466

9 April 1985 High Current Implantation Systems For CMOS

B. A. Thorburn, R. B. Thayer

Proceedings Volume 0530, Advanced Applications of Ion Implantation; (1985) https://doi.org/10.1117/12.946466
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States

Abstract

The critical requirements of CMOS device fabrication have placed new demands on "front end" equipment manufacturers. In particular, ion implant manufacturers face the challenge of producing higher Arsenic beam currents in the 50-100keV range, copious Boron beam currents in the 20-40keV range, reduced particulates, and greater equipment reliability. The impact of high packing density, smaller line widths, and low device power consumption, recognized with the newest CMOS designs, will continue to broaden the requirements for implanter equipment flexibility. Compared to NMOS technology, the added high dose requirement of the P+ Channel Source-Drain substantially increases the ion implant time necessary to meet production needs. To meet these needs, many high volume CMOS device fabricators have dedicated processing equipment to operate at specific energies, doses, and ion species. Varian has developed a series of High Current Implantation Systems to help CMOS manufacturers meet these challenges.

Citation Download Citation

B. A. Thorburn and R. B. Thayer "High Current Implantation Systems For CMOS", Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); https://doi.org/10.1117/12.946466

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