Paper
7 June 2004 A large-area CMOS monolithic active pixel sensor for extreme ultraviolet spectroscopy and imaging
Author Affiliations +
Abstract
We describe our programme to develop science-grade CMOS active pixel sensors for future space science missions, and in particular an extreme ultra-violet spectrograph for solar physics studies on the ESA Solar Orbiter. Our goal is the development of a large format 4k x 4k pixel CMOS sensor with useful sensitivity in the extreme ultra-violet (EUV) for solar physics spectroscopy and imaging. Our route to EUV sensitivity relies primarily in adapting the back-thinning and rear-illumination techniques first developed for CCD sensors; however we are also exploring the alternative approach of using a front-etch to expose the CMOS photodiodes. We have successfully back-thinned several 525 x 525 prototype CMOS sensors and proved that the devices survived the process both structurally and functionally. We have also been successful in removing the oxide from the front side of a small array of pixels, using focused ion beam etching. Preliminary results from these pixels show they are sensitive in the Ultra Violet. We have also designed a working large format 4k x 3k prototype on a 0.25 micron CMOS imager process.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mark L. Prydderch, Nick R. Waltham, Quentin Morrissey, Marcus French, Renato Turchetta, and Peter Pool "A large-area CMOS monolithic active pixel sensor for extreme ultraviolet spectroscopy and imaging", Proc. SPIE 5301, Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications V, (7 June 2004); https://doi.org/10.1117/12.526401
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Cited by 8 scholarly publications and 1 patent.
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KEYWORDS
Sensors

Photodiodes

CMOS sensors

Silicon

Transistors

Imaging spectroscopy

Extreme ultraviolet

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