Thermal stability of ion-irradiated InGaAs with subpicosecond carrier lifetime

Juliette Mangeney; Laurent Joulaud; Jean-Michel Lourtioz; Paul Crozat; Gilles Patriarche

doi:10.1117/12.527679

16 June 2004 Thermal stability of ion-irradiated InGaAs with subpicosecond carrier lifetime

Juliette Mangeney, Laurent Joulaud, Jean-Michel Lourtioz, Paul Crozat, Gilles Patriarche

Proceedings Volume 5352, Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII; (2004) https://doi.org/10.1117/12.527679
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States

Abstract

Due to its very short carrier lifetime and its absorption window in the 1550nm spectral range, ion-irradiated InGaAs is a material of choice for opto-electronic telecommunication systems. Ion irradiated-InGaAs is a well adapted material for realizing fast saturable absorbers and fast photoconductive antennas. However, to our knowledge, no detailed experimental study has been reported on the thermal stability of ion-irradiated InGaAs. Post-irradiation annealing of such a material is required to enhance opto-electrical response, and the thermal stability of irradiated devices. Moreover, the study of annealing kinetics provides useful information about the nature of defects and their initial distribution. The carrier lifetime, the mobility and the residual carrier concentration versus anneal in heavy(Au⁺) and light(H⁺) ion-irradiated InGaAs samples have been measured. The defect annealing kinetics observed in proton-irradiated samples is described well by a Frenkel pair recombination model, thereby indicating the dominance of isolated point defects. In contrast, the model is not adapted to describe the thermal behavior of Au⁺-irradiation-induced defects that are clusters of point defects as observed via Transmission Electronic Microscopy. A higher thermal stability for the components based on Au⁺-irradiated InGaAs than on H⁺-irradiated ones is then expected.

Citation Download Citation

Juliette Mangeney, Laurent Joulaud, Jean-Michel Lourtioz, Paul Crozat, and Gilles Patriarche "Thermal stability of ion-irradiated InGaAs with subpicosecond carrier lifetime", Proc. SPIE 5352, Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII, (16 June 2004); https://doi.org/10.1117/12.527679

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