Superluminescent diode at 1.55 um with a bent absorbing guide structure

Jeong-Ho Kim; Se-Kyung An; Dong-Won Kim; Jae-Hwan You; In-Sik Jung; Mi-Suk Choi; Young-Kyu Choi; Tchang-Hee Hong

doi:10.1117/12.530626

28 May 2004 Superluminescent diode at 1.55 um with a bent absorbing guide structure

Jeong-Ho Kim, Se-Kyung An, Dong-Won Kim, Jae-Hwan You, In-Sik Jung, Mi-Suk Choi, Young-Kyu Choi, Tchang-Hee Hong

Proceedings Volume 5355, Integrated Optics: Devices, Materials, and Technologies VIII; (2004) https://doi.org/10.1117/12.530626
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States

Abstract

An InGaAsP/InP superluminescent diode (SLD) emitting at 1.55 um has been fabricated by the metal organic vapor deposition (MOCVD) and liquid phase epitaxy (LPE) equipments. Lasing is effectively suppressed by incorporating a bent absorbing guide structure for SLD operation. The fabricated SLD has an optical power of 4mW at an injection current of 200 mA. The spectral width of the SLD is 40 nm at the same current.

Citation Download Citation

Jeong-Ho Kim, Se-Kyung An, Dong-Won Kim, Jae-Hwan You, In-Sik Jung, Mi-Suk Choi, Young-Kyu Choi, and Tchang-Hee Hong "Superluminescent diode at 1.55 um with a bent absorbing guide structure", Proc. SPIE 5355, Integrated Optics: Devices, Materials, and Technologies VIII, (28 May 2004); https://doi.org/10.1117/12.530626

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