InGaAs quantum dot structures grown in GaAs barrier by metal-organic chemical vapor deposition for high-efficient long-wavelength emission

Adriana Passaseo; Vittorianna Tasco; Milena De Giorgi; Maria Teresa Todaro; Iolena Tarantini; Roberto Cingolani; Massimo De Vittorio

doi:10.1117/12.528810

14 June 2004 InGaAs quantum dot structures grown in GaAs barrier by metal-organic chemical vapor deposition for high-efficient long-wavelength emission

Adriana Passaseo, Vittorianna Tasco, Milena De Giorgi, Maria Teresa Todaro, Iolena Tarantini, Roberto Cingolani, Massimo De Vittorio

Author Affiliations +

Proceedings Volume 5361, Quantum Dots, Nanoparticles, and Nanoclusters; (2004) https://doi.org/10.1117/12.528810
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States

Abstract

In this work we present a method to obtain room temperature ground state emission beyond 1.3 μm from InGaAs QDs, grown by MOCVD, embedded directly into a binary GaAs matrix. The wavelength is tuned from 1.26 μm up to 1.33 μm by varying the V/III ratio during the growth of the GaAs cap layer, without using seeding layer or InGaAs wells. A line-shape narrowing (from 36 meV to 24 meV) and a strong reduction of the temperature dependent quenching of the emission (down to a factor 3 from 10K to 300K) are observed, that represent the best value reported for QD structures emitting at 1.3 μm. The results are explained in term different morphological evolution and surface reconstruction undergone by the InGaAs islands during the GaAs overgrowth that result in larger QD size and in lower In-Ga intermixing. Indeed, cross sectional TEM images show an increase in the QD size of more than 30% with decreasing the AsH₃ flow. The overall strain reduction due to the use of the GaAs matrix allows the fabrication of highly efficient staked QD layers. The single and multiple QDs samples show a systematic increase of the emission intensity and similar spectral shape.

Citation Download Citation

Adriana Passaseo, Vittorianna Tasco, Milena De Giorgi, Maria Teresa Todaro, Iolena Tarantini, Roberto Cingolani, and Massimo De Vittorio "InGaAs quantum dot structures grown in GaAs barrier by metal-organic chemical vapor deposition for high-efficient long-wavelength emission", Proc. SPIE 5361, Quantum Dots, Nanoparticles, and Nanoclusters, (14 June 2004); https://doi.org/10.1117/12.528810

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Gallium arsenide

Indium gallium arsenide

Metalorganic chemical vapor deposition

Transmission electron microscopy

Quantum dots

Atomic force microscopy

Gallium

Show All Keywords

Keywords/Phrases

Search In:

Publication Years