MWIR detectors on HgCdTe grown by MBE on 3-in. diameter silicon substrates

Tae-Seok Lee; Jun Zhao; Yong Chang; Renganathan Ashokan; Sivalingam Sivananthan; Paul Boieriu; Yuanping Chen; Gregory Brill; Priyalal S. Wijewarnasuriya; Nibir K. Dhar

doi:10.1117/12.568012

22 October 2004 MWIR detectors on HgCdTe grown by MBE on 3-in. diameter silicon substrates

Tae-Seok Lee, Jun Zhao, Yong Chang, Renganathan Ashokan, Sivalingam Sivananthan, Paul Boieriu, Yuanping Chen, Gregory Brill, Priyalal S. Wijewarnasuriya, Nibir K. Dhar

Author Affiliations +

Proceedings Volume 5564, Infrared Detector Materials and Devices; (2004) https://doi.org/10.1117/12.568012
Event: Optical Science and Technology, the SPIE 49th Annual Meeting, 2004, Denver, Colorado, United States

Abstract

Mid wavelength infrared (MWIR) HgCdTe heterostructures were grown on 3-inch dia Si (211) substrates by the molecular beam epitaxy technique and p+n format devices were fabricated by arsenic ion implantation. Very long wavelength infrared (VLWIR) layers have been employed as interfacial layers to block the propagation of detects from the substrate interface into the HgCdTe epilayers. Excellent material characteristics including the minority carrier lifetime of 7.2 usec at 200K and 2 usec at 80K in the n-HgCdTe absorber layer with 5 um cut-off wavelength at 80K were achieved. The photovoltaic detectors fabricated on these MWIR heterostructures show excellent zero-bias resistance-area product (R0A) on the order of 10⁸ ohm-cm² and peak dynamic impedances on the order of 109 ohm-cm². A two-step arsenic activation anneal followed by the 'Hg' vacancy filling anneal (third step) is shown to produce the best R0A values, since the intermediate temperature annealing step seems to control the diffusion of arsenic, assisted by the implantation-induced defects. The experimental R0A values are compared with that predicted by theory based on a one-dimensional model, indicating g-r limited performance of these MWIR devices at 80K.

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Tae-Seok Lee, Jun Zhao, Yong Chang, Renganathan Ashokan, Sivalingam Sivananthan, Paul Boieriu, Yuanping Chen, Gregory Brill, Priyalal S. Wijewarnasuriya, and Nibir K. Dhar "MWIR detectors on HgCdTe grown by MBE on 3-in. diameter silicon substrates", Proc. SPIE 5564, Infrared Detector Materials and Devices, (22 October 2004); https://doi.org/10.1117/12.568012

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