Memory cell with photoacoustic switching

Dmitry E. Milovzorov

doi:10.1117/12.568290

19 January 2005 Memory cell with photoacoustic switching

Dmitry E. Milovzorov

Proceedings Volume 5592, Nanofabrication: Technologies, Devices, and Applications; (2005) https://doi.org/10.1117/12.568290
Event: Optics East, 2004, Philadelphia, Pennsylvania, United States

Abstract

The manufacturing of nanoscale devices with sizes smaller than 100 nm is founded on the quantum physical phenomena. We proposed the new nanoscale device with photoacoustic switching. The memory cell can be made by means of two thin silicon surface layers one of which contains oxygen in Si-O-Si bonding. The charge storage is caused by inserting on clean silicon layer the oxygen incorporated with silicon. The mechanical deformation of upper oxidized silicon layer results in shift of atomic positions. The oxygen appearance on the silicon surface is reflected on electronic structure as new defect level inside band gap. The electrons are stored on this oxygen related level with energy position Ec-0.18 eV. By applied bias voltage we realize the erase procedure by removing the stored electron. The silicon surface should be prepared because the oxygen incorporation depends on the chemical properties. The electronic structure of oxidized silicon surfaces with (111) and (100) orientation was tested by using second harmonic generation response. The characteristic time of storage, 1 ns, was measured by using the laser time-resolved short pulse spectroscopy. We used modelocked mode of laser system with pulse duration 120 ps. The speed of switching was approximately 10¹³ Hz.

Citation Download Citation

Dmitry E. Milovzorov "Memory cell with photoacoustic switching", Proc. SPIE 5592, Nanofabrication: Technologies, Devices, and Applications, (19 January 2005); https://doi.org/10.1117/12.568290

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