Simulation of 1.3-µm AlGaInAs/InP strained MQW lasers

Shang-Wei Hsieh; Hsiu-Fen Chen; Ming-Wei Yao; Yen-Kuang Kuo

doi:10.1117/12.575434

20 January 2005 Simulation of 1.3-μm AlGaInAs/InP strained MQW lasers

Shang-Wei Hsieh, Hsiu-Fen Chen, Ming-Wei Yao, Yen-Kuang Kuo

Proceedings Volume 5628, Semiconductor Lasers and Applications II; (2005) https://doi.org/10.1117/12.575434
Event: Photonics Asia, 2004, Beijing, China

Abstract

Optimization of a 1300-nm AlGaInAs/InP strained multiple quantum-well structure with an electron stop layer, which is located between the active region and the p-type GRIN-SCH layer, is studied numerically with a LASTIP simulation program. Specifically, the effect of the electron stop layer on the characteristic temperature and the temperature dependence of the slope efficiency are investigated. Various physical parameters at different operating temperatures are adjusted so that the threshold currents of the simulated laser structure can be matched to the results measured experimentally by Selmic et al. Our simulated results suggest that the AlInAs is a better material for the electron stop layer than the GaAsP. With the use of a p-type Al_0.5In_0.5As electron stop layer and an active region consisting of Al_0.175Ga_0.095In_0.73As(6 nm)/Al_0.27Ga_0.21In_0.52As(10 nm), a characteristic temperature of as high as 94.7 K is achieved for the 250-µm-long AlGaInAs/InP strained quantum-well laser under study.

Citation Download Citation

Shang-Wei Hsieh, Hsiu-Fen Chen, Ming-Wei Yao, and Yen-Kuang Kuo "Simulation of 1.3-μm AlGaInAs/InP strained MQW lasers", Proc. SPIE 5628, Semiconductor Lasers and Applications II, (20 January 2005); https://doi.org/10.1117/12.575434

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