A new ZEP520/P(MMA-MAA)/ZEP520 trilayer process for T-shaped gate using synchrotron-based proximity x-ray lithography

Changqing Xie; Dapeng Chen; Jiebing Niu; Ming Liu; Tianchun Ye; Futing Yi; Liangqiang Peng

doi:10.1117/12.573519

27 January 2005 A new ZEP520/P(MMA-MAA)/ZEP520 trilayer process for T-shaped gate using synchrotron-based proximity x-ray lithography

Changqing Xie, Dapeng Chen, Jiebing Niu, Ming Liu, Tianchun Ye, Futing Yi, Liangqiang Peng

Author Affiliations +

Proceedings Volume 5645, Advanced Microlithography Technologies; (2005) https://doi.org/10.1117/12.573519
Event: Photonics Asia, 2004, Beijing, China

Abstract

T-shaped gate formation is a important process step in the fabrication of high frequency monolithic microwave integrated circuits (MMIC), many different lithography process have been used for this purpose, such as bi-layer or tri-layer using e-beam lithography, hybrid UV-e-beam lithography. Proximity x-ray lithography (PXL) has shown many advantages in the MMIC manufacturing, such as high resolution, large process windows, low cost and high throughout, and so on. In this article, a new ZEP520/P(MMA-MAA)/ZEP520 tri-layer process using synchrotron-based PXL is proposed for the T-shaped gate formation, without any additional intermediate layer, the resists intermixing problem has been solved successfully, a dark-field isolated trench x-ray mask was used for this purpose. A three stage development process using xylene for the head, MIBK:IPA=1:3 for the middle and xylene for the foot was also used. Initial work has shown this process to be robust.

Citation Download Citation

Changqing Xie, Dapeng Chen, Jiebing Niu, Ming Liu, Tianchun Ye, Futing Yi, and Liangqiang Peng "A new ZEP520/P(MMA-MAA)/ZEP520 trilayer process for T-shaped gate using synchrotron-based proximity x-ray lithography", Proc. SPIE 5645, Advanced Microlithography Technologies, (27 January 2005); https://doi.org/10.1117/12.573519

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