Paper
27 January 2005 The advanced nanofabrication technology
Ming Liu, Qiuxia Xu, Baoqin Chen, Changqing Xie, Tianchun Ye, Xinchun Liu
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Abstract
Some research results in advanced optical lithography, Electron beam lithography, X-ray lithography are introduced in this paper. For advanced optical lithography, optical proximity correction and phase-shift masking (PSM) are studied, and 150nm pattern is achieved by i-line Stepper using transparent PSM. For e-beam lithography, the resist process, proximity effect correction and mix & match technologies are investigated, and 27nm CMOS device is successfully fabricated. The 0.15μm GaAs PHEMT devices are successfully fabricated by employing X-ray lithography.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ming Liu, Qiuxia Xu, Baoqin Chen, Changqing Xie, Tianchun Ye, and Xinchun Liu "The advanced nanofabrication technology", Proc. SPIE 5645, Advanced Microlithography Technologies, (27 January 2005); https://doi.org/10.1117/12.570206
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KEYWORDS
Optical lithography

Electron beam lithography

Lithography

X-ray lithography

Photomasks

Gallium arsenide

Etching

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