Paper
31 March 2005 Electrical and optical property of ferroelectric BaTiO3:Eu
Yeonjoon Park, Alexander Grichener, Jacob Jensen, Sang H. Choi
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Abstract
We studied various electrical and optical properties of Europium (1 atomic %) incorporated BaTiO3 film on n-Si(100) substrate. The thin film structure was analyzed by X-ray diffraction. Film thickness and optical refractive index were measured with an ellipsometer. P-E hysteresis measurement shows the remnant polarization of 37 micro-C/cm2 in BaTiO3:Eu film. C-V measurements on the pure BaTiO3 film show recovery of capacitance across sweeping voltage ranges with a narrow transition zone due to the polarization change. On the other hand, C-V and I-V measurements on the BaTiO3:Eu film show that Europium incorporation increases positively charged states in the BaTiO3 layer such that BaTiO3:Eu/n-Si interface behaves like a leaky p-n junction.
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Yeonjoon Park, Alexander Grichener, Jacob Jensen, and Sang H. Choi "Electrical and optical property of ferroelectric BaTiO3:Eu", Proc. SPIE 5728, Integrated Optics: Devices, Materials, and Technologies IX, (31 March 2005); https://doi.org/10.1117/12.590364
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KEYWORDS
Europium

Capacitance

Barium

Crystals

Titanium

Silicon

Optical properties

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