Silica microspheres as high-Q microcavities for semiconductor quantum-dot lasers

Jean Hare; Sebastien Steiner; Fedja Orucevic; Valerie Lefevre-Seguin

doi:10.1117/12.605692

25 March 2005 Silica microspheres as high-Q microcavities for semiconductor quantum-dot lasers

Jean Hare, Sebastien Steiner, Fedja Orucevic, Valerie Lefevre-Seguin

Proceedings Volume 5729, Optoelectronic Integrated Circuits VII; (2005) https://doi.org/10.1117/12.605692
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

We report an experiment where InAs/GaAs self-organized Quantum Dots (QD) are coupled to the evanescent field of very-high-Q Whispering Gallery Modes (WGM) in a silica microsphere. The high performance of these microcavity and nanoemitters allowed to achieve very low threshold (200 μm) laser operation at room temperature, involving a few thousands of QD. We show that such a low threshold relies heavily on WGM deconfinement and reconstruction in the micromesa etched in GaAs sample. Next, we present some prospects on further experiments involving various semiconductor nanostructures coupled to microspheres or to silica microtoroids integrated on a Si chip (as recently introduced by K.J.~Vahala and coworkers at Caltech).

Citation Download Citation

Jean Hare, Sebastien Steiner, Fedja Orucevic, and Valerie Lefevre-Seguin "Silica microspheres as high-Q microcavities for semiconductor quantum-dot lasers", Proc. SPIE 5729, Optoelectronic Integrated Circuits VII, (25 March 2005); https://doi.org/10.1117/12.605692

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