Broad-spectrum light emission from metal-insulator-silicon tunnel diodes

James G. Mihaychuk; Mike W. Denhoff; Sean P. McAlister; W. Ross McKinnon; Jean Lapointe; Albert Chin

doi:10.1117/12.586431

7 March 2005 Broad-spectrum light emission from metal-insulator-silicon tunnel diodes

James G. Mihaychuk, Mike W. Denhoff, Sean P. McAlister, W. Ross McKinnon, Jean Lapointe, Albert Chin

Proceedings Volume 5730, Optoelectronic Integration on Silicon II; (2005) https://doi.org/10.1117/12.586431
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

We report broad-spectrum electroluminescence (EL) in metal-insulator-silicon (MIS) tunnel diodes. In addition to Si-band-edge EL near 1.1 eV, hot-electron EL in Si can span a detector-limited range from 0.7 eV to 2.6 eV (1780 nm to 480 nm). The maximum EL photon energy increases with forward-bias voltage. In one implementation, sub-micron-size sites for light emission appear during forward-bias stress. The number of sites is linear in the applied current, consistent with formation of an anti-fuse at each site following breakdown of the insulator. We compare the post-stress current-voltage data to the quantum-point-contact model. Results are presented for various p-type Si(100) MIS devices having thin (8 nm or less) insulating layers of SiO₂, Al₂O₃, and HfO_xN_y. We also describe novel MIS devices in which electron-beam lithography of an 18-nm-thick SiO₂ insulator is used to define the EL sites.

Citation Download Citation

James G. Mihaychuk, Mike W. Denhoff, Sean P. McAlister, W. Ross McKinnon, Jean Lapointe, and Albert Chin "Broad-spectrum light emission from metal-insulator-silicon tunnel diodes", Proc. SPIE 5730, Optoelectronic Integration on Silicon II, (7 March 2005); https://doi.org/10.1117/12.586431

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