High-temperature continuous-wave operation of 1310-nm single-mode grating-outcoupled surface-emitting semiconductor lasers

Taha Masood; Nuditha V. Amarasinghe; Scott McWilliams; Steve Patterson; David Roh; Gary A. Evans; Jerome Butler

doi:10.1117/12.591827

1 April 2005 High-temperature continuous-wave operation of 1310-nm single-mode grating-outcoupled surface-emitting semiconductor lasers

Taha Masood, Nuditha V. Amarasinghe, Scott McWilliams, Steve Patterson, David Roh, Gary A. Evans, Jerome Butler

Author Affiliations +

Proceedings Volume 5738, Novel In-Plane Semiconductor Lasers IV; (2005) https://doi.org/10.1117/12.591827
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

High temperature continuous-wave (CW) operation of 1310-nm single-frequency grating-outcoupled surface emitting (GSE) semiconductor lasers with output powers exceeding 3.0 mW into a multi-mode fiber, threshold currents below 30 mA and with > 30 dB side-mode suppression ratios at temperatures of up to 85 C are reported. These lasers consist of a 400 um long horizontal cavity, and a 15 um long second-order outcoupler grating sandwiched between 200 um long first-order distributed Bragg reflector (DBRs) gratings. Higher output powers can be achieved with longer outcoupler gratings. These GSE lasers operate at 3.125 Gbps and have a full-width at half-maximum (FWHM) beam divergence of 7 x 13 degrees.

Citation Download Citation

Taha Masood, Nuditha V. Amarasinghe, Scott McWilliams, Steve Patterson, David Roh, Gary A. Evans, and Jerome Butler "High-temperature continuous-wave operation of 1310-nm single-mode grating-outcoupled surface-emitting semiconductor lasers", Proc. SPIE 5738, Novel In-Plane Semiconductor Lasers IV, (1 April 2005); https://doi.org/10.1117/12.591827

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KEYWORDS

GRIN lenses

Semiconductor lasers

Aluminum

Cladding

Continuous wave operation

Reflectivity

Etching

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