Effect of oxygen implantation on the characteristic of Ge2Sb2Te5 phase change film

Bo Liu; Zhitang Song; Ting Zhang; Songlin Feng; Bomy Chen

doi:10.1117/12.607329

8 December 2004 Effect of oxygen implantation on the characteristic of Ge₂Sb₂Te₅ phase change film

Bo Liu, Zhitang Song, Ting Zhang, Songlin Feng, Bomy Chen

Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.607329
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China

Abstract

Ge₂Sb₂Te₅ films were deposited by RF magnetron sputtering on Si (100)/SiO₂ substrates. O⁺ ion was implanted into Ge₂Sb₂Te₅ films. It is indicated that the structure of crystalline Ge₂Sb₂Te_5-O annealed at 250°C is still identified as a FCC structure and the lattice parameter increases with the increasing oxygen implant dose. However, phase separation takes place when annealing temperature is 450°C. Oxygen implantation has great effect on the resistance of Ge2Sb2Te₅ film. Due to oxygen doping, the resistance of Ge₂Sb₂Te5 film decreases when annealing temperature is lower than 300°C because the FCC unit cell was distorted by oxygen atom occupying the tetrahedral interstitial site and the defects were increased, which results in larger number of current carrier. However, resistance of Ge₂Sb₂Te₅ film increases when annealing temperature is higher than 340°C, which may be caused by phase separation and current carrier being scattered by crystallite boundary.

Citation Download Citation

Bo Liu, Zhitang Song, Ting Zhang, Songlin Feng, and Bomy Chen "Effect of oxygen implantation on the characteristic of Ge₂Sb₂Te₅ phase change film", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.607329

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