Paper
8 December 2004 Influence of different bottom electrodes to microstructure and electrical properties of Pb(Zr0.52Ti0.48)O3 ferroelectric films
Jian-Kang Li, Xi Yao, Liangying Zhang
Author Affiliations +
Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.607559
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China
Abstract
LaNiO3 (LNO) thin films were successfully prepared on Si (100) and Pt/Ti/SiO2/Si substrates by metalorganic decomposition (MOD). The PZT thin films were spin-coated onto the LNO, LNO/Pt and Pt bottom electrodes by a modified sol-gel method. The crystallographic orientation and the microstructure of the resulting LNO films and PZT thin films on the different bottom electrodes were characterized by X-ray diffraction analysis. The dielectric, ferroelectric and leakage current properties of PZT films on the different bottom electrodes are discussed. The PZT films deposited on LNO/Pt/Ti/SiO2/Si and LNO/Si (100) substrates show strong (100) preferred orientation, while the films deposited on Pt/Ti/SiO2/Si substrates show (110) orientations. PZT films on LNO and LNO/Pt bottom electrodes have larger dielectric constant and remnant polarizations compared to those grown on the Pt electrode, but the leakage current of the films on Pt electrode are lower than that on LNO bottom electrode.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jian-Kang Li, Xi Yao, and Liangying Zhang "Influence of different bottom electrodes to microstructure and electrical properties of Pb(Zr0.52Ti0.48)O3 ferroelectric films", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.607559
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Electrodes

Ferroelectric materials

Silicon

Thin films

Platinum

Capacitors

Crystals

Back to Top