Paper
8 December 2004 Influences of post-deposition annealing on the properties of the ZrO2 thin films prepared by electron beam evaporation
S. Y. Shao, Jian Da Shao, D. P. Zhang, J. B. Huang, Zheng Xiu Fan
Author Affiliations +
Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.607336
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China
Abstract
The ZrO2 thin films were deposited on BK7 glass substrates by electron beam evaporation method at room temperature. The influences of post-deposition annealing between 200°C and 400°C on the structural and mechanical properties of the films have been investigated by X-ray diffraction and atomic force microscopy. It was found that a monoclinic phase formed at lower temperature of 200°C. With the increase of the annealing temperature, the tetragonal phase appeared. The stress in ZrO2 films showed a transition from tensile to compressive which could be explained as the evolution of the microstructure as function of annealing temperatures. At the same time, the refractive index of the ZrO2 films increased with the increasing of annealing temperatures, which may be ascribed to the microstructure densification of the ZrO2 films.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Y. Shao, Jian Da Shao, D. P. Zhang, J. B. Huang, and Zheng Xiu Fan "Influences of post-deposition annealing on the properties of the ZrO2 thin films prepared by electron beam evaporation", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.607336
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KEYWORDS
Annealing

Thin films

Diffraction

Refractive index

Electron beams

Zirconium dioxide

Crystals

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