Electron transport in silicon inversion slabs of nanometric thickness

F. Gamiz; J. B. Roldan; A. Godoy; C. Sampedro

doi:10.1117/12.608239

28 June 2005 Electron transport in silicon inversion slabs of nanometric thickness

F. Gamiz, J. B. Roldan, A. Godoy, C. Sampedro

Proceedings Volume 5838, Nanotechnology II; (2005) https://doi.org/10.1117/12.608239
Event: Microtechnologies for the New Millennium 2005, 2005, Sevilla, Spain

Abstract

We study the electron transport in ultrathin silicon inversion layers with thickness in a range from 20nm down to 2nm by Monte Carlo simulation. Quantum effects are taken into account by simultaneously solving the Poisson and Schroedinger equations. Once the electron distribution in the silicon layer is known, the effect of a longitudinal electric field applied parallel to the silicon slab is studied. To do so, the Boltzmann transport equation is solved by the Monte Carlo method, and the electron mobility is evaluated. The influence of different scattering mechanisms has been analyzed. We show that two opposite effects appear on the electron mobility as the silicon thickness is reduced. On one hand the subband modulation effect, which contributes to an increase in the electron mobility. On the other hand, the greater confinement of the carriers as the silicon thickness decreases produces, as a consequence of the uncertainty principle, an increase of the phonon scattering rate, and therefore a decrease on the electron mobility. The superposition of these two opposite effects makes that electron mobility does not have a clear trend as the silicon slab thickness decreases.

Citation Download Citation

F. Gamiz, J. B. Roldan, A. Godoy, and C. Sampedro "Electron transport in silicon inversion slabs of nanometric thickness", Proc. SPIE 5838, Nanotechnology II, (28 June 2005); https://doi.org/10.1117/12.608239

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