High efficiency phosphorescent organic light-emitting devices with a new organic material as the host of the emitting layer

Hsin-Hung Tsai; Jiun-Haw Lee; Man-Kit Leung

doi:10.1117/12.618897

9 October 2005 High efficiency phosphorescent organic light-emitting devices with a new organic material as the host of the emitting layer

Hsin-Hung Tsai, Jiun-Haw Lee, Man-Kit Leung

Author Affiliations +

Proceedings Volume 5937, Organic Light-Emitting Materials and Devices IX; 593722 (2005) https://doi.org/10.1117/12.618897
Event: Optics and Photonics 2005, 2005, San Diego, California, United States

Abstract

In this paper, we demonstrate a phosphorescent organic light emitting device (PHOLED) with low turn-on voltage by using a n-type organic material as the host of the emitting layer (EML) doped with green emitting complex, fac tris(2-phenylpyridine) iridium Ir(ppy)₃. This material exhibits high glass transition temperature (over 200 °C) that may help to elongate the operation lifetime. We compare our devices to the classical 4,4'-N,N'-dicarbazole-biphenyl (CBP) based green device. Driving voltage of the CBP and the new-host based OLED is 16 and 11 V with the current density of 100mA/cm², respectively. The lower driving voltage of the new-host based device comes from the lower HOMO value, i.e. 5.7 eV, which is nearly the same as that of NPB. The current efficiency at 10000 cd/m² is slightly decreased from 24 to 21 cd/A. However, the power efficiency is increased from 5 to 6 lm/W.

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Hsin-Hung Tsai, Jiun-Haw Lee, and Man-Kit Leung "High efficiency phosphorescent organic light-emitting devices with a new organic material as the host of the emitting layer", Proc. SPIE 5937, Organic Light-Emitting Materials and Devices IX, 593722 (9 October 2005); https://doi.org/10.1117/12.618897

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