V-defects at MBE MCT heteroepitaxy on GaAs(310) and Si(310) substrates

Maxim Yakushev; Alexander Babenko; Danil Ikusov; Vladimir Kartashov; Nicolai Mikhailov; Irina Sabinina; Yuri Sidorov; Vladimir Vasiliev

doi:10.1117/12.622424

29 September 2005 V-defects at MBE MCT heteroepitaxy on GaAs(310) and Si(310) substrates

Maxim Yakushev, Alexander Babenko, Danil Ikusov, Vladimir Kartashov, Nicolai Mikhailov, Irina Sabinina, Yuri Sidorov, Vladimir Vasiliev

Author Affiliations +

Proceedings Volume 5957, Infrared Photoelectronics; 59570G (2005) https://doi.org/10.1117/12.622424
Event: Congress on Optics and Optoelectronics, 2005, Warsaw, Poland

Abstract

CdTe and HgCdTe layers were grown by MBE on GaAs(310) and Si(310) substrates. The dependences of microrelief height and macroscopic defects densities on the growth conditions of CdTe layer are plotted. CdTe buffer layers with the average height of surface relief of 2 nm are obtained. HgCdTe layers on GaAs(310) substrates with V-shaped defects density of 200-300 cm^-2 were grown. When Si(310) substrates are used, the boundaries between antiphase domains are an additional reason for formation of V-shaped defects. It is shown, that the optimization of surface preparation processes and the growth conditions allows to grow one-domain films of CdTe buffer layers on Si(310) substrates and to lower the density of V-shaped defects.

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Maxim Yakushev, Alexander Babenko, Danil Ikusov, Vladimir Kartashov, Nicolai Mikhailov, Irina Sabinina, Yuri Sidorov, and Vladimir Vasiliev "V-defects at MBE MCT heteroepitaxy on GaAs(310) and Si(310) substrates", Proc. SPIE 5957, Infrared Photoelectronics, 59570G (29 September 2005); https://doi.org/10.1117/12.622424

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