Growth and characterization of single crystal semiconductor Ga<sub>2</sub>O<sub>3 </sub> nanowires and nano-ribbons for sensing applications

S. M. Prokes; W. E. Carlos; O. J. Glembocki

doi:10.1117/12.630644

17 November 2005 Growth and characterization of single crystal Ga₂O₃ nanowires and nano-ribbons for sensing applications

S. M. Prokes, W. E. Carlos, O. J. Glembocki

Author Affiliations +

Proceedings Volume 6008, Nanosensing: Materials and Devices II; 60080C (2005) https://doi.org/10.1117/12.630644
Event: Optics East 2005, 2005, Boston, MA, United States

Abstract

The growth of monoclinic Ga₂O₃ nanowires, nano-ribbons and nano-sheets has been investigated. Results indicate that high quality single crystal nanowires can be grown at 900°C using an Au catalyst, while single crystal nano-ribbons and nano-sheets require no metal catalyst for growth. Since bulk Ga₂O₃ is a promising material for high temperature sensing, Ga₂O₃ nanowires and nano-ribbons may prove to enhance the sensing capability due to the high surface area. We have investigated the nature of defects in this material using Electron Spin Resonance, in as grown material, as well as under annealing in a reducing gas (H₂) at various high temperatures. Results indicate the presence of an oxygen deficiency in the material, resulting in a conduction electron signal that becomes enhanced with annealing. An alternate use of these nanowires for sensing applications will also be presented, involving Surface Enhanced Raman Spectroscopy.

Citation Download Citation

S. M. Prokes, W. E. Carlos, and O. J. Glembocki "Growth and characterization of single crystal Ga₂O₃ nanowires and nano-ribbons for sensing applications", Proc. SPIE 6008, Nanosensing: Materials and Devices II, 60080C (17 November 2005); https://doi.org/10.1117/12.630644

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