Paper
17 November 2005 High temperature electrical conductivity of nano-structured ZnO
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Proceedings Volume 6008, Nanosensing: Materials and Devices II; 60080D (2005) https://doi.org/10.1117/12.631007
Event: Optics East 2005, 2005, Boston, MA, United States
Abstract
Both ac and dc conductivities of nominally pure nanocrystalline ZnO ceramics with grain size of ~ 40 nm were measured as a function of oxygen partial pressure and temperature, and compared with coarsened microcrystalline samples (grain size of ~ 5 μm). Nanocrystalline ceramics showed intrinsic bulk properties which turned into extrinsic behavior on coarsening. This is attributed to extreme impurity segregation into grain boundary core in nanocrystalline ceramics owing to the markedly enhanced interface-to-volume ratio. Nonetheless the blocking effect (Schottky barriers) of the grain boundaries in the nanocrystalline sample was negligible compared to that in the coarsened material due to the extreme dilution of the interfacial traps. Investigations on dopant behavior in ZnO nanowire bridges based on high temperature electrical measurements are currently under progress.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sangtae Kim "High temperature electrical conductivity of nano-structured ZnO", Proc. SPIE 6008, Nanosensing: Materials and Devices II, 60080D (17 November 2005); https://doi.org/10.1117/12.631007
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KEYWORDS
Zinc oxide

Ceramics

Nanowires

Oxygen

Microcrystalline materials

Temperature metrology

Bridges

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