Paper
8 December 2005 Numerical simulation and experiment of novel semiconductor/superlattice distributed Bragg reflectors
Changling Yan, Jingchang Zhong, Xiaohua Wang, Yingjie Zhao, Yongqin Hao, Yuan Feng
Author Affiliations +
Proceedings Volume 6021, Optical Transmission, Switching, and Subsystems III; 60214D (2005) https://doi.org/10.1117/12.635616
Event: Asia-Pacific Optical Communications, 2005, Shanghai, China
Abstract
We introduced a novel semiconductor/superlattice AlAs/(GaAs/AlAs) distributed Bragg reflector (DBR), and the reflection spectrum of the DBR at 980nm wavelength is simulated by employing transfer matrix method. By adjusting the thickness of AlAs layer and the period of superlattice GaAs/AlAs, the DBR with center wavelength at 1500nm is also investigated theoretically. In experiment, this kind of DBR is grown on GaAs (100) substrate. From the measured reflection spectrum, the central wavelength is about 980 nm with high reflectivity.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Changling Yan, Jingchang Zhong, Xiaohua Wang, Yingjie Zhao, Yongqin Hao, and Yuan Feng "Numerical simulation and experiment of novel semiconductor/superlattice distributed Bragg reflectors", Proc. SPIE 6021, Optical Transmission, Switching, and Subsystems III, 60214D (8 December 2005); https://doi.org/10.1117/12.635616
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Semiconductors

Reflectivity

Vertical cavity surface emitting lasers

Gallium arsenide

Distributed Bragg reflectors

Superlattices

Numerical simulations

Back to Top