Microchip laser operating at 1338 nm

Jan Šulc; Helena Jelínkova; Karel Nejezchleb; Václav Škoda

doi:10.1117/12.641901

28 February 2006 Microchip laser operating at 1338 nm

Jan Šulc, Helena Jelínkova, Karel Nejezchleb, Václav Škoda

Proceedings Volume 6100, Solid State Lasers XV: Technology and Devices; 610005 (2006) https://doi.org/10.1117/12.641901
Event: Lasers and Applications in Science and Engineering, 2006, San Jose, California, United States

Abstract

Q-switched microchip laser emitting radiation at wavelength 1338 nm was designed and realized. This laser was based on monolith crystal which combines in one piece a cooling undoped part (undoped YAG crystal, 4 mm long), active laser part (YAG crystal doped with Nd³⁺ ions, 12 mm long) and saturable absorber (YAG crystal doped with V³⁺ ions, 0.7 mm long). The diameter of the diffusion bounded monolith was 5 mm. The initial transmission of the V:YAG part was 85 %. The microchip resonator consists of dielectric mirrors directly deposited on the monolith surfaces. The pump mirror (HT for pump radiation, HR for generated radiation) was placed on the undoped YAG part. The output coupler with reflection 90 % for the generated wavelength was placed on the V³⁺-doped part. Q-switched microchip laser was tested under pulsed, and CW diode pumping. The pulse length it was the same for all regimes equal to 6.2 ns. The wavelength of linearly polarized laser emission was fixed to 1338 nm. The pulse energy depends on the mean pump power. For pulsed pumping the output pulse energy was stable up to mean pump power 1 W and it was equal to 135 μJ, which corresponds to peak power 22 kW. In CW regime for pumping up to 14 W the pulse energy was stabilized to 37 μJ (peak power 6 kW). The mean output power increased up to 0.4 W only by increase of the generated pulse repetition rate (11 kHz for mean pump power 14 W).

Citation Download Citation

Jan Šulc, Helena Jelínkova, Karel Nejezchleb, and Václav Škoda "Microchip laser operating at 1338 nm", Proc. SPIE 6100, Solid State Lasers XV: Technology and Devices, 610005 (28 February 2006); https://doi.org/10.1117/12.641901

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Crystals

Laser crystals

Pulsed laser operation

Semiconductor lasers

YAG lasers

Continuous wave operation

Ions

Show All Keywords

Keywords/Phrases

Search In:

Publication Years