Laser processing of advanced materials with high brightness solid-state lasers at 532 nm

T. Riesbeck; A. Binder; H. J. Eichler

doi:10.1117/12.642791

1 March 2006 Laser processing of advanced materials with high brightness solid-state lasers at 532 nm

T. Riesbeck, A. Binder, H. J. Eichler

Proceedings Volume 6106, Photon Processing in Microelectronics and Photonics V; 610603 (2006) https://doi.org/10.1117/12.642791
Event: Lasers and Applications in Science and Engineering, 2006, San Jose, California, United States

Abstract

Many materials e.g. diamond or silicon do not show sufficient absorption at one micron, the fundamental wavelength of Nd-based solid-state laser sources. Frequency conversion to the second and fourth harmonic allows the efficient processing of these materials. High beam quality is another important property for micro material processing with lasers. It facilitates small focus diameters and due to high Rayleigh length even at strong focusing drilling of holes with high aspect ratio. Together with high average output powers it allows fast processes with high quality. At least flexible pulse peak power and repetition rate is necessary to optimize the process. Two laser systems which fulfill these requirements are investigated. A pulse pumped Nd:YAP system which delivers an average output power of 124 W at the second harmonic and a Nd:YAG with an average output power up to 50 W in the second harmonic. Due to its active Q-switch the pulse peak power of this system is variable in a wide range. Efficient laser processing of different ceramics with these laser system are presented.

Citation Download Citation

T. Riesbeck, A. Binder, and H. J. Eichler "Laser processing of advanced materials with high brightness solid-state lasers at 532 nm", Proc. SPIE 6106, Photon Processing in Microelectronics and Photonics V, 610603 (1 March 2006); https://doi.org/10.1117/12.642791

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