Photoluminescence refrigeration in semiconductors

J.-B. Wang; S. R. Johnson; D. Ding; S.-Q. Yu; Y.-H. Zhang

doi:10.1117/12.645359

28 February 2006 Photoluminescence refrigeration in semiconductors

J.-B. Wang, S. R. Johnson, D. Ding, S.-Q. Yu, Y.-H. Zhang

Proceedings Volume 6115, Physics and Simulation of Optoelectronic Devices XIV; 61152C (2006) https://doi.org/10.1117/12.645359
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

A theoretical study of photoluminescence refrigeration in semiconductors has been carried out using a model that takes into account photon recycling and includes the rate equations for both carriers and photons. General expressions for cooling efficiency, cooling power density, and the cooling condition are derived. The investigation of the photoluminescence refrigeration in an intrinsic GaAs slab shows that net cooling is accessible when quantum efficiency and luminescence extraction are high, and that photon recycling contributes strongly to photoluminescence refrigeration when the luminescence extraction efficiency is small.

Citation Download Citation

J.-B. Wang, S. R. Johnson, D. Ding, S.-Q. Yu, and Y.-H. Zhang "Photoluminescence refrigeration in semiconductors", Proc. SPIE 6115, Physics and Simulation of Optoelectronic Devices XIV, 61152C (28 February 2006); https://doi.org/10.1117/12.645359

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