Paper
2 March 2006 ZnO nanorods for electronic nanodevice applications
Won Il Park, J. Yoo, H.-J. Kim, C. H. Lee, Gyu-Chul Yi
Author Affiliations +
Abstract
We report on fabrications and characteristics of high performance ZnO nanorod nanodevices including Schottky diodes, metal-oxide-semiconductor field-effect transistors (MOSFETs), metal-semiconductor field-effect transistors (MESFETs) and logic gate devices. Electrical characteristics of several ZnO nanorod MOSFETs are compared in this proceeding. In particular, after coating polymer thin films on ZnO nanorod surfaces, the nanorod MOSFETs exhibited much improved field effect transistor characteristics including field effect electron mobility as high as 3000 cm2/Vs. In addition, ZnO nanorod Schottky diodes and MESFETs were fabricated using Au/ZnO Schottky contacts without any specific oxide etching process. These devices have been used for realization of ZnO nanorod logic gates.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Won Il Park, J. Yoo, H.-J. Kim, C. H. Lee, and Gyu-Chul Yi "ZnO nanorods for electronic nanodevice applications", Proc. SPIE 6122, Zinc Oxide Materials and Devices, 612206 (2 March 2006); https://doi.org/10.1117/12.659650
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Cited by 2 scholarly publications.
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KEYWORDS
Nanorods

Zinc oxide

Field effect transistors

Diodes

Coating

Logic

Logic devices

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