Application of scatterometry to measure organic material profile

Sunyoung Koo; Keundo Ban; Chang-moon Lim; Cheolkyu Bok; Seung-Chan Moon; Jinwoong Kim

doi:10.1117/12.656847

24 March 2006 Application of scatterometry to measure organic material profile

Sunyoung Koo, Keundo Ban, Chang-moon Lim, Cheolkyu Bok, Seung-Chan Moon, Jinwoong Kim

Proceedings Volume 6152, Metrology, Inspection, and Process Control for Microlithography XX; 61522T (2006) https://doi.org/10.1117/12.656847
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

Scanning Electron Microscope (SEM) has been typical methods for measuring CD of nanopatterns until ArF process was introduced. However in case of ArF process, this method has serious drawback such as shrinkage of organic material by the irradiation of high-energy electron beam. The optical scatterometry system is considered to be promising method for measuring CD due to no damage on organic materials. Sub-80nm node gate was selected because of its measurement stability. CD, profile and thickness are compared with those measured by CD-SEM, cress-section SEM. The correlation degree is shown as GOF, R2, and Profile. Based on merit of speed, easiness and accurate measurement, optical CD method has been applied to CD uniformity. CD uniformity measured by OCD was very similar to that measured by SEM on gate pattern. Based on this result, OCD was applied for the improvement of CD uniformity combined with ASML's does-mapper in technology. We investigated the variation of thickness of organic BARC over topology of various size line and space patterned poly-Si by OCD.

Citation Download Citation

Sunyoung Koo, Keundo Ban, Chang-moon Lim, Cheolkyu Bok, Seung-Chan Moon, and Jinwoong Kim "Application of scatterometry to measure organic material profile", Proc. SPIE 6152, Metrology, Inspection, and Process Control for Microlithography XX, 61522T (24 March 2006); https://doi.org/10.1117/12.656847

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KEYWORDS

Critical dimension metrology

Scatterometry

Semiconducting wafers

Scanning electron microscopy

Etching

Metrology

Silicon

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