Paper
18 April 2006 Single- and multilayer Si:Er structures for LED and laser applications grown with sublimation MBE technique
Zakhary F. Krasilnik, Boris A. Andreev, Tom Gregorkievicz, Ludmila V. Krasil'nikova, Viktor P. Kuznetsov, Hanka Przybylinska, Dmitry Yu. Remizov, Viacheslav B. Shmagin, Vladimir G. Shengurov, Margarita V. Stepikhova, Victor Yu. Timoshenko, Denis M. Zhigunov
Author Affiliations +
Proceedings Volume 6180, Photonics, Devices, and Systems III; 61800L (2006) https://doi.org/10.1117/12.675660
Event: Photonics, Devices, and Systems III, 2005, Prague, Czech Republic
Abstract
We present here last results on development and research of Si:Er-based light emitting structures grown with original sublimation molecular beam epitaxy (SMBE) technique. The paper contains a description of the experimental facilities, results of the light emitting media (Si:Er and Si1-xGex:Er) research and device applications.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zakhary F. Krasilnik, Boris A. Andreev, Tom Gregorkievicz, Ludmila V. Krasil'nikova, Viktor P. Kuznetsov, Hanka Przybylinska, Dmitry Yu. Remizov, Viacheslav B. Shmagin, Vladimir G. Shengurov, Margarita V. Stepikhova, Victor Yu. Timoshenko, and Denis M. Zhigunov "Single- and multilayer Si:Er structures for LED and laser applications grown with sublimation MBE technique", Proc. SPIE 6180, Photonics, Devices, and Systems III, 61800L (18 April 2006); https://doi.org/10.1117/12.675660
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KEYWORDS
Erbium

Electroluminescence

Light emitting diodes

Ions

Silicon

Diodes

Germanium

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