Rare earth doped gallium nitride layers for photonics applications

Václav Prajzler; Ivan Hüttel; Jarmila Špirkova; Jiři Oswald; Vratislav Peřina; Jiři Zavadil; Jiři Hamáček; Vladimír Machovič; Zdeněk Burian

doi:10.1117/12.675723

18 April 2006 Rare earth doped gallium nitride layers for photonics applications

Václav Prajzler, Ivan Hüttel, Jarmila Špirkova, Jiři Oswald, Vratislav Peřina, Jiři Zavadil, Jiři Hamáček, Vladimír Machovič, Zdeněk Burian

Author Affiliations +

Proceedings Volume 6180, Photonics, Devices, and Systems III; 618018 (2006) https://doi.org/10.1117/12.675723
Event: Photonics, Devices, and Systems III, 2005, Prague, Czech Republic

Abstract

We report about fabrication and properties of Gallium Nitride (GaN) layers containing the Rare Earth (RE) ions. Gallium nitride is a promising wide band gaps direct semiconductor material, which doped with the RE ions would play a very important role in various optoelectronics and photonics applications. The GaN thin films were deposited by magnetron sputtering in Ar + N₂ gas mixture using Ga₂O₃ target as the source of Gallium. For the RE doping, the Er₂O₃, Yb₂O₃, Pr₂O₃ and Nd₂O₃ pellets, or Er and Yb powder were laid on the top of the Ga₂O₃ target. The GaN layers were deposited on silicon, silica on silicon, Corning glass or quartz substrates. The results of the experiments were evaluated in terms of the relations between the technology/precursors approaches and the composition and luminescence properties of the fabricated thin films.

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Václav Prajzler, Ivan Hüttel, Jarmila Špirkova, Jiři Oswald, Vratislav Peřina, Jiři Zavadil, Jiři Hamáček, Vladimír Machovič, and Zdeněk Burian "Rare earth doped gallium nitride layers for photonics applications", Proc. SPIE 6180, Photonics, Devices, and Systems III, 618018 (18 April 2006); https://doi.org/10.1117/12.675723

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