Study of vertical type organic light emitting transistor using ZnO

Hiroyuki Iechi; Yasuyuki Watanabe; Kazuhiro Kudo

doi:10.1117/12.662381

20 April 2006 Study of vertical type organic light emitting transistor using ZnO

Hiroyuki Iechi, Yasuyuki Watanabe, Kazuhiro Kudo

Proceedings Volume 6192, Organic Optoelectronics and Photonics II; 61920K (2006) https://doi.org/10.1117/12.662381
Event: SPIE Photonics Europe, 2006, Strasbourg, France

Abstract

We propose a new type organic light emitting transistor (OLET) combining static induction transistor (SIT) with double hetero junction type organic light emitting diodes (OLED) using n-type zinc oxide (ZnO) films which works as a transparent and electron injection layer. The device characteristics of newly developed OLED and ZnO-SIT showed relatively high luminance of about 500 cd/m² at 7.6 mA/cm² and is able to control by gate voltage as low as a few volts, respectively. The crystal structures of the ZnO films as a function of Ar/O₂ flow ratio and the basic characteristics of the thin film transistor (TFT) and SIT depending on the ZnO sputtering conditions are investigated. The results obtained here show that the OLET using ZnO film is a suitable element for flexible sheet displays.

Citation Download Citation

Hiroyuki Iechi, Yasuyuki Watanabe, and Kazuhiro Kudo "Study of vertical type organic light emitting transistor using ZnO", Proc. SPIE 6192, Organic Optoelectronics and Photonics II, 61920K (20 April 2006); https://doi.org/10.1117/12.662381

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