Proton Bombarded Gallium Arsenide: Opto-Electronic Effects

J. M. Zavada; H. A. Jenkinson; D. C. Larson

doi:10.1117/12.961203

26 June 1986 Proton Bombarded Gallium Arsenide: Opto-Electronic Effects

J. M. Zavada, H. A. Jenkinson, D. C. Larson

Proceedings Volume 0623, Advanced Processing and Characterization of Semiconductors III; (1986) https://doi.org/10.1117/12.961203
Event: O-E/LASE'86 Symposium, 1986, Los Angeles, CA, United States

Abstract

Proton bombardment of doped gallium arsenide is known to produce electrical compensation and optical changes within the implanted material. In semi-conductor processing this technique has found wide application ranging from electrical device isolation to laser fabrication. This paper addresses recent advances in this technology with emphasis on opto-electronic developments. Components and devices formed through this process are reviewed as well as the optical and electrical properties of the bombarded material.

Citation Download Citation

J. M. Zavada, H. A. Jenkinson, and D. C. Larson "Proton Bombarded Gallium Arsenide: Opto-Electronic Effects", Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); https://doi.org/10.1117/12.961203

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