Tantalum And Niobium Silicides Formed By Scanning Electron Beam

Zhan Guobing; Wang yangyuan; Lin shi-Chang; Zhang yan sheng; Fan bing lin

doi:10.1117/12.961215

26 June 1986 Tantalum And Niobium Silicides Formed By Scanning Electron Beam

Zhan Guobing, Wang yangyuan, Lin shi-Chang, Zhang yan sheng, Fan bing lin

Proceedings Volume 0623, Advanced Processing and Characterization of Semiconductors III; (1986) https://doi.org/10.1117/12.961215
Event: O-E/LASE'86 Symposium, 1986, Los Angeles, CA, United States

Abstract

The properties and structures of tantalum and niobium silicides formed by rapid annealing of scanning Electron Beam have been investigated. The fine layers of tantalum and silicon Niobium and silicon were deposited by co-sputtering system and co-evaporating system, respectively. The Scanning Electron beam Equipment with quasi-linear source was used to realize the rapid annealing for forming the TaSi₂ and NbSi₂. The x-ray diffraction RBS and TEM have been used to characterize the Composition and structure of silicide film. The best conditions of forming silicides has been presented. The single phase TaSi₂ and NbSi₂ and the resistivity of 50 Micro Ohm-Cm have been obtained in annealing time of 10-100 seconds. The results have been compared with those of furnace thermal annealing.

Citation Download Citation

Zhan Guobing, Wang yangyuan, Lin shi-Chang, Zhang yan sheng, and Fan bing lin "Tantalum And Niobium Silicides Formed By Scanning Electron Beam", Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); https://doi.org/10.1117/12.961215

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