Organic CMOS technology by interface treatment

Niels Benson; Marcus Ahles; Martin Schidleja; Andrea Gassmann; Eric Mankel; Thomas Mayer; Christian Melzer; Roland Schmechel; Heinz von Seggern

doi:10.1117/12.680049

25 August 2006 Organic CMOS technology by interface treatment

Niels Benson, Marcus Ahles, Martin Schidleja, Andrea Gassmann, Eric Mankel, Thomas Mayer, Christian Melzer, Roland Schmechel, Heinz von Seggern

Author Affiliations +

Proceedings Volume 6336, Organic Field-Effect Transistors V; 63360S (2006) https://doi.org/10.1117/12.680049
Event: SPIE Optics + Photonics, 2006, San Diego, California, United States

Abstract

In the present paper a new concept towards O-CMOS technology is presented substantiating the importance of the semiconductor/dielectric interface for charge carrier transport in organic semiconductors. It will be demonstrated that by controlling the interface properties of either SiO₂ or PMMA, unipolar p- and n-type OFETs can be realized using a single organic semiconductor and even a single metal for source and drain contacts. Two dielectric/semiconductor interface modifications are considered for the realization of complementary OFETs on the basis of pentacene, otherwise known for its exclusive hole transporting properties. Selective modification of the SiO₂ dielectric interface with traces of vacuum deposited Ca, allows for electron transport in pentacene and the realization of complementary pentacene OFETs on a single substrate. By this technique electron traps are removed due to a reaction of atomic Ca with oxygen from available hydroxide groups, resulting in the formation of an oxidized Ca layer. In a second approach, it is demonstrated that by selective UV treatment of a PMMA dielectric surface, unipolar n-type pentacene OFETs can be converted to unipolar p-type by the introduction of electron traps in the form of -OH and -COOH groups at the PMMA interface. Both methods allow for the realization of CMOS organic inverter stages with decent electrical properties.

Citation Download Citation

Niels Benson, Marcus Ahles, Martin Schidleja, Andrea Gassmann, Eric Mankel, Thomas Mayer, Christian Melzer, Roland Schmechel, and Heinz von Seggern "Organic CMOS technology by interface treatment", Proc. SPIE 6336, Organic Field-Effect Transistors V, 63360S (25 August 2006); https://doi.org/10.1117/12.680049

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